BSC0503NSIATMA1

Specifications

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

1300pF @ 15V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kılıf / Paket

8-PowerTDFN

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2015

Drainsource On Resistancemax

0.0037Ohm

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

352A

Drain Currentmax Abs Id

22A

Gate Charge Qg Max Vgs

20nC @ 10V

Current Continuous Drain Id25

22A Ta 88A Tc

Power Dissipation Max

2.5W Ta 36W Tc

Case Connection

DRAIN

Parça Durumu

Active

Vgs Max

±20V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

5

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

88A

Rds On Max Id Vgs

3m Ω @ 30A, 10V

Jesd30 Code

R-PDSO-F5

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

8

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Max Dual Supply Voltage

30V

Configuration

SINGLE WITH BUILT-IN DIODE