BSC047N08NS3GATMA1

Specifications

Turn On Delay Time

18 ns

Gate Charge Qg Max Vgs

69nC @ 10V

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

26 Weeks

Parça Durumu

Active

Case Connection

DRAIN

Turn Off Delay Time

44 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

11 ns

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

400A

Seri

OptiMOS™

Kurşunsuz Kodu

no

Terminal Pozisyonu

DUAL

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

3.5V @ 90μA

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

80V

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Fet Type

N-Channel

Terminal Formu

FLAT

Rds On Max Id Vgs

4.7m Ω @ 50A, 10V

Power Dissipation

125W

Power Dissipation Max

2.5W Ta 125W Tc

Qualification Status

Not Qualified

Current Continuous Drain Id25

18A Ta 100A Tc

Terminal Sayısı

5

Vgs Max

±20V

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Number Of Elements

1

Input Capacitance Ciss Max Vds

4800pF @ 40V

Drainsource On Resistancemax

0.0047Ohm

Yayın Yılı

2004