BSC042NE7NS3GATMA1

Specifications

Turn On Delay Time

14 ns

Gate Charge Qg Max Vgs

69nC @ 10V

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

13 Weeks

Case Connection

DRAIN

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

9 ns

Turn Off Delay Time

34 ns

Montaj

Surface Mount

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

400A

Kurşunsuz Kodu

no

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Avalanche Energy Rating Eas

220 mJ

Vgsth Max Id

3.8V @ 91μA

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

75V

Gate To Source Voltage Vgs

20V

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Formu

FLAT

Rds On Max Id Vgs

4.2m Ω @ 50A, 10V

Power Dissipation

2.5W

Current Continuous Drain Id25

19A Ta 100A Tc

Qualification Status

Not Qualified

Power Dissipation Max

2.5W Ta 125W Tc

Vgs Max

±20V

Terminal Sayısı

5

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Input Capacitance Ciss Max Vds

4800pF @ 37.5V

Number Of Elements

1

Pin Sayısı

8

Drainsource On Resistancemax

0.0042Ohm

Operating Mode

ENHANCEMENT MODE