BSC042N03LSGATMA1

Specifications

Transistor Element Material

SILICON

Fet Type

N-Channel

Terminal Formu

FLAT

Rds On Max Id Vgs

4.2m Ω @ 30A, 10V

Power Dissipation

57W

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

2.2V @ 250μA

Avalanche Energy Rating Eas

50 mJ

Max Dual Supply Voltage

30V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

372A

Kurşunsuz Kodu

no

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drain Currentmax Abs Id

20A

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

42nC @ 10V

Fabrika Tedarik Süresi

39 Weeks

Case Connection

DRAIN

Parça Durumu

Active

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Rise Time

4.4ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

93A

REACH Uyumluluk Kodu

not_compliant

Pin Sayısı

8

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Input Capacitance Ciss Max Vds

3500pF @ 15V