BSC040N10NS5ATMA1

Specifications

Turn Off Delay Time

32 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

10 ns

RoHS Durumu

ROHS3 Compliant

Number Of Channels

1

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

400A

Seri

OptiMOS™

Kurşunsuz Kodu

yes

Turn On Delay Time

13 ns

Gate Charge Qg Max Vgs

72nC @ 10V

Fabrika Tedarik Süresi

26 Weeks

Parça Durumu

Active

Case Connection

DRAIN

Weight

506.605978mg

Transistor Element Material

SILICON

Fet Type

N-Channel

Terminal Formu

FLAT

Max Junction Temperature Tj

150°C

Rds On Max Id Vgs

4m Ω @ 50A, 10V

Power Dissipation

139W

Terminal Pozisyonu

DUAL

Element Configuration

Single

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Breakdown Voltage

100V

Vgsth Max Id

3.8V @ 95μA

Avalanche Energy Rating Eas

200 mJ

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

100V

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Input Capacitance Ciss Max Vds

5300pF @ 50V

Drainsource On Resistancemax

0.004Ohm

Yayın Yılı

2013

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.5W Ta 139W Tc

Current Continuous Drain Id25

100A Tc

Terminal Sayısı

5