BSC035N10NS5ATMA1

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Yükseklik

1.1mm

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

100A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

Power Dissipation Max

2.5W Ta 156W Tc

Current Continuous Drain Id25

100A Tc

Terminal Sayısı

5

Vgs Max

±20V

Number Of Elements

1

Input Capacitance Ciss Max Vds

6500pF @ 50V

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2013

Threshold Voltage

3V

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0035Ohm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Kurşunsuz

Contains Lead

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

100V

Configuration

SINGLE WITH BUILT-IN DIODE

Drain To Source Breakdown Voltage

100V

Avalanche Energy Rating Eas

300 mJ

Vgsth Max Id

3.8V @ 115μA

Terminal Formu

FLAT

Max Junction Temperature Tj

150°C

Transistor Element Material

SILICON

Fet Type

N-Channel

Power Dissipation

2.5W

Rds On Max Id Vgs

3.5m Ω @ 50A, 10V

Gate Charge Qg Max Vgs

87nC @ 10V

Turn On Delay Time

22 ns