BSC031N06NS3GATMA1

Specifications

Drain Currentmax Abs Id

22A

Gate Charge Qg Max Vgs

130nC @ 10V

JESD-609 Kodu

e3

Turn On Delay Time

38 ns

Case Connection

DRAIN

Parça Durumu

Active

Fabrika Tedarik Süresi

26 Weeks

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

16 ns

Turn Off Delay Time

63 ns

Kurşunsuz Kodu

no

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

400A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

60V

Gate To Source Voltage Vgs

20V

Vgsth Max Id

4V @ 93μA

Terminal Formu

FLAT

Fet Type

N-Channel

Transistor Element Material

SILICON

Power Dissipation

2.5W

Rds On Max Id Vgs

3.1m Ω @ 50A, 10V

Current Continuous Drain Id25

100A Tc

Qualification Status

Not Qualified

Power Dissipation Max

2.5W Ta 139W Tc

Vgs Max

±20V

Terminal Sayısı

8

Number Of Elements

1

Input Capacitance Ciss Max Vds

11000pF @ 30V

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Reach Svhc

No SVHC

Kılıf / Paket

8-PowerTDFN