BSC030P03NS3GAUMA1

Specifications

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

200A

Kurşunsuz Kodu

no

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

33 ns

Turn Off Delay Time

98 ns

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Number Of Channels

1

Montaj

Surface Mount

Fabrika Tedarik Süresi

13 Weeks

Case Connection

DRAIN

Parça Durumu

Active

Turn On Delay Time

27 ns

Gate Charge Qg Max Vgs

186nC @ 10V

JESD-609 Kodu

e3

Rds On Max Id Vgs

3m Ω @ 50A, 10V

Radyasyon Dayanımı

No

Power Dissipation

2.5W

Transistor Element Material

SILICON

Fet Type

P-Channel

Max Junction Temperature Tj

150°C

Terminal Formu

FLAT

Vgsth Max Id

3.1V @ 345μA

Avalanche Energy Rating Eas

345 mJ

Drain To Source Breakdown Voltage

-30V

Max Dual Supply Voltage

-30V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

25V

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Drainsource On Resistancemax

0.0046Ohm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2005

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Input Capacitance Ciss Max Vds

14000pF @ 15V

Number Of Elements

1

Pin Sayısı

8