BSC030N03LSGATMA1

Specifications

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

23A

Seri

OptiMOS™

Drainsource On Resistancemax

0.0047Ohm

Transistor Application

SWITCHING

Yayın Yılı

2009

Fet Type

N-Channel

Fabrika Tedarik Süresi

26 Weeks

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

3m Ω @ 30A, 10V

Current Continuous Drain Id25

23A Ta 100A Tc

Turn On Delay Time

7.3 ns

Operating Mode

ENHANCEMENT MODE

Max Dual Supply Voltage

30V

Kurşunsuz

Contains Lead

Number Of Elements

1

Terminal Formu

FLAT

Kurşunsuz Kodu

no

Radyasyon Dayanımı

No

Fall Time Typ

4.8 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Avalanche Energy Rating Eas

75 mJ

Case Connection

DRAIN

JESD-609 Kodu

e3

Kılıf / Paket

8-PowerTDFN

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation Max

2.5W Ta 69W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

400A

Pin Sayısı

8

Vgs Max

±20V

Halogen Free

Halogen Free

Vgsth Max Id

2.2V @ 250μA

Rise Time

5.2ns

Transistor Element Material

SILICON

Power Dissipation

69W