BSC027N06LS5ATMA1

Specifications

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

4400pF @ 30V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

30nC @ 4.5V

Terminal Sayısı

5

Montaj Tipi

Surface Mount

Drain To Source Voltage Vdss

60V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

2.3V @ 49μA

Jesd30 Code

R-PDSO-F5

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Parça Durumu

Active

Terminal Formu

FLAT

Power Dissipation Max

83W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Vgs Max

±20V

Fabrika Tedarik Süresi

26 Weeks

Drain Currentmax Abs Id

23A

Pulsed Drain Currentmax Idm

400A

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

2.7m Ω @ 50A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

100A Tc

Terminal Pozisyonu

DUAL

Avalanche Energy Rating Eas

100 mJ

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Seri

OptiMOS™

Ds Breakdown Voltagemin

60V

Yüzey Montaj

YES

Transistor Application

SWITCHING

Yayın Yılı

2013

Kılıf / Paket

8-PowerTDFN

Drainsource On Resistancemax

0.0027Ohm