BSC022N04LSATMA1

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Breakdown Voltage

40V

Operating Mode

ENHANCEMENT MODE

Max Dual Supply Voltage

40V

Kurşunsuz

Contains Lead

Number Of Elements

1

Terminal Formu

FLAT

Fet Type

N-Channel

Fabrika Tedarik Süresi

26 Weeks

Ambalaj

Tape & Reel (TR)

Temel Parça No

BSC022N04

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

2.2m Ω @ 50A, 10V

Current Continuous Drain Id25

100A Tc

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

100A

Seri

OptiMOS™

Drainsource On Resistancemax

0.0032Ohm

Transistor Application

SWITCHING

Yayın Yılı

2012

Gate Charge Qg Max Vgs

37nC @ 10V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

2600pF @ 20V

Montaj Tipi

Surface Mount

Terminal Sayısı

5

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Vgsth Max Id

2V @ 250μA

Jesd30 Code

R-PDSO-F5

Rise Time

6.8ns

Transistor Element Material

SILICON

Parça Durumu

Active

Power Dissipation Max

2.5W Ta 69W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

25A

Pulsed Drain Currentmax Idm

400A

Pin Sayısı

8