BSC020N03MSGATMA1

Specifications

Qualification Status

Not Qualified

Halogen Free

Halogen Free

Vgs Max

±20V

Pin Sayısı

8

Pulsed Drain Currentmax Idm

400A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta 96W Tc

Additional Feature

AVALANCHE RATED

Kılıf / Paket

8-PowerTDFN

JESD-609 Kodu

e3

Case Connection

DRAIN

Contact Plating

Tin

Avalanche Energy Rating Eas

200 mJ

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

16V

Terminal Sayısı

8

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

9600pF @ 15V

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

124nC @ 10V

Parça Durumu

Active

Power Dissipation

96W

Transistor Element Material

SILICON

Rise Time

14ns

Vgsth Max Id

2V @ 250μA

Current Continuous Drain Id25

25A Ta 100A Tc

Rds On Max Id Vgs

2m Ω @ 30A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

26 Weeks

Fet Type

N-Channel

Yayın Yılı

2010

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.0025Ohm

Seri

OptiMOS™

Continuous Drain Current Id

25A

RoHS Durumu

ROHS3 Compliant