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BSC019N02KSGAUMA1

Infineon Technologies

BSC019N02KSGAUMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Montaj Tipi
Surface Mount
Terminal Sayısı
5
Gate To Source Voltage Vgs
12V
Gate Charge Qg Max Vgs
85nC @ 4.5V
Turn Off Delay Time
95 ns
ECCN Kodu
EAR99
Input Capacitance Ciss Max Vds
13000pF @ 10V
Configuration
SINGLE WITH BUILT-IN DIODE
Drive Voltage Max Rds On Min Rds On
2.5V 4.5V
Transistor Element Material
SILICON
Vgsth Max Id
1.2V @ 350μA
Jesd30 Code
R-PDSO-F5
Rise Time
187ns
Power Dissipation
104W
Parça Durumu
Not For New Designs
Drain Currentmax Abs Id
30A
Pulsed Drain Currentmax Idm
200A
Pin Sayısı
8
Vgs Max
±12V
Additional Feature
AVALANCHE RATED
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation Max
2.8W Ta 104W Tc
Qualification Status
Not Qualified
Halogen Free
Halogen Free
REACH Uyumluluk Kodu
not_compliant
Terminal Pozisyonu
DUAL
Kılıf / Paket
8-PowerTDFN
Case Connection
DRAIN
JESD-609 Kodu
e3
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Fall Time Typ
8 ns
Çalışma Sıcaklığı
-55°C~150°C TJ
Pin Sayısı
8
Terminal Kaplaması
Tin (Sn)
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
15 ns
Terminal Formu
FLAT
Kurşunsuz Kodu
no
Max Dual Supply Voltage
20V
Kurşunsuz
Contains Lead

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