BSC016N06NSTATMA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

6V 10V

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Drain To Source Voltage Vdss

60V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

6500pF @ 30V

Gate Charge Qg Max Vgs

95nC @ 10V

Terminal Formu

FLAT

Parça Durumu

Active

Number Of Elements

1

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Vgsth Max Id

3.3V @ 95μA

Jesd30 Code

R-PDSO-F3

Rds On Max Id Vgs

1.6m Ω @ 50A, 10V

Current Continuous Drain Id25

31A Ta 100A Tc

Ambalaj

Tape & Reel (TR)

Fet Type

N-Channel

Vgs Max

±20V

Fabrika Tedarik Süresi

13 Weeks

Drain Currentmax Abs Id

30A

Pulsed Drain Currentmax Idm

400A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

3W Ta 167W Tc

Yüzey Montaj

YES

Transistor Application

SWITCHING

Kılıf / Paket

8-PowerTDFN

Drainsource On Resistancemax

0.0016Ohm

Case Connection

DRAIN

Seri

OptiMOS™

Ds Breakdown Voltagemin

60V

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

380 mJ

Terminal Pozisyonu

DUAL