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BSC014N06NSTATMA1

Infineon Technologies

BSC014N06NSTATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Drain To Source Breakdown Voltage
60V
Vgsth Max Id
3.3V @ 120μA
Turn On Delay Time
23 ns
Number Of Channels
1
Parça Durumu
Active
Power Dissipation
3W
Input Capacitance Ciss Max Vds
8125pF @ 30V
Gate Charge Qg Max Vgs
104nC @ 10V
Turn Off Delay Time
43 ns
Gate To Source Voltage Vgs
20V
Montaj Tipi
Surface Mount
Drive Voltage Max Rds On Min Rds On
6V 10V
Yükseklik
1.1mm
Çalışma Sıcaklığı
-55°C~175°C TJ
RoHS Durumu
ROHS3 Compliant
Seri
OptiMOS™
Continuous Drain Current Id
31A
Max Junction Temperature Tj
175°C
Kılıf / Paket
8-PowerTDFN
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation Max
3W Ta 188W Tc
Fabrika Tedarik Süresi
13 Weeks
Vgs Max
±20V
Fet Type
N-Channel
Ambalaj
Tape & Reel (TR)
Current Continuous Drain Id25
100A Tc
Rds On Max Id Vgs
1.45m Ω @ 50A, 10V

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