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BSC014N04LSIATMA1

Infineon Technologies

BSC014N04LSIATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

REACH Uyumluluk Kodu
not_compliant
Terminal Pozisyonu
DUAL
Avalanche Energy Rating Eas
90 mJ
Max Junction Temperature Tj
150°C
Case Connection
DRAIN
JESD-609 Kodu
e3
Kılıf / Paket
8-PowerTDFN
Additional Feature
LOGIC LEVEL COMPATIBLE
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation Max
2.5W Ta 96W Tc
Pulsed Drain Currentmax Idm
400A
Pin Sayısı
8
Vgs Max
±20V
Halogen Free
Halogen Free
Vgsth Max Id
2V @ 250μA
Jesd30 Code
R-PDSO-F3
Number Of Channels
1
Transistor Element Material
SILICON
Power Dissipation
2.5W
Parça Durumu
Active
Turn Off Delay Time
55 ns
Gate Charge Qg Max Vgs
55nC @ 10V
ECCN Kodu
EAR99
Input Capacitance Ciss Max Vds
4000pF @ 20V
Montaj Tipi
Surface Mount
Terminal Sayısı
3
Gate To Source Voltage Vgs
20V
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Threshold Voltage
2V
Configuration
SINGLE WITH BUILT-IN DIODE
Montaj
Surface Mount
RoHS Durumu
ROHS3 Compliant
Continuous Drain Current Id
100A
Seri
OptiMOS™
Drainsource On Resistancemax
0.002Ohm
Transistor Application
SWITCHING
Yayın Yılı
2010
Fet Type
N-Channel
Fabrika Tedarik Süresi
39 Weeks
Ambalaj
Cut Tape (CT)

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