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BSC011N03LSIATMA1

Infineon Technologies

BSC011N03LSIATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

RoHS Durumu
ROHS3 Compliant
Montaj
Surface Mount
REACH Uyumluluk Kodu
not_compliant
Terminal Pozisyonu
DUAL
Transistor Application
SWITCHING
Yayın Yılı
2012
Kılıf / Paket
8-PowerTDFN
Continuous Drain Current Id
37A
Case Connection
DRAIN
JESD-609 Kodu
e3
Seri
OptiMOS™
Fet Type
N-Channel
Fabrika Tedarik Süresi
26 Weeks
Vgs Max
±20V
Pin Sayısı
8
Pulsed Drain Currentmax Idm
400A
Power Dissipation Max
2.5W Ta 96W Tc
Nem Hassasiyeti (MSL)
1 (Unlimited)
Rds On Max Id Vgs
1.1m Ω @ 30A, 10V
Qualification Status
Not Qualified
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Current Continuous Drain Id25
37A Ta 100A Tc
Halogen Free
Halogen Free
Ambalaj
Tape & Reel (TR)
Transistor Element Material
SILICON
Operating Mode
ENHANCEMENT MODE
Rise Time
9.2ns
Vgsth Max Id
2V @ 250μA
Jesd30 Code
R-PDSO-F5
Kurşunsuz Kodu
no
Terminal Formu
FLAT
Kurşunsuz
Contains Lead
Number Of Elements
1
Parça Durumu
Active
Power Dissipation
2.5W
Max Dual Supply Voltage
30V
Terminal Sayısı
5
Gate To Source Voltage Vgs
20V
Montaj Tipi
Surface Mount
ECCN Kodu
EAR99

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