BSC010N04LSIATMA1

Specifications

Power Dissipation

2.5W

Parça Durumu

Active

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-F3

Vgsth Max Id

2V @ 250μA

Rise Time

48ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

Gate Charge Qg Max Vgs

87nC @ 10V

Turn Off Delay Time

72 ns

Input Capacitance Ciss Max Vds

6200pF @ 20V

ECCN Kodu

EAR99

Kılıf / Paket

8-PowerTDFN

JESD-609 Kodu

e3

Case Connection

DRAIN

Avalanche Energy Rating Eas

230 mJ

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Halogen Free

Halogen Free

Pulsed Drain Currentmax Idm

400A

Drain Currentmax Abs Id

37A

Pin Sayısı

8

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta 139W Tc

Additional Feature

ULTRA LOW RESISTANCE

Fet Feature

Schottky Diode (Body)

Terminal Formu

FLAT

Kurşunsuz Kodu

no

Max Dual Supply Voltage

40V

Number Of Elements

1

Kurşunsuz

Contains Lead

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

40V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

17 ns

Terminal Kaplaması

Tin (Sn)