BSC010N04LSATMA1

Specifications

Number Of Channels

1

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-F3

Vgsth Max Id

2V @ 250μA

Rise Time

12ns

Power Dissipation

2.5W

Parça Durumu

Active

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

Turn Off Delay Time

46 ns

Gate Charge Qg Max Vgs

95nC @ 10V

Input Capacitance Ciss Max Vds

6800pF @ 20V

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Threshold Voltage

1.2V

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

not_compliant

Avalanche Energy Rating Eas

330 mJ

Kılıf / Paket

8-PowerTDFN

Max Junction Temperature Tj

150°C

JESD-609 Kodu

e3

Case Connection

DRAIN

Pulsed Drain Currentmax Idm

400A

Pin Sayısı

8

Vgs Max

±20V

Power Dissipation Max

2.5W Ta 139W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Halogen Free

Halogen Free

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

10 ns

Drain To Source Breakdown Voltage

40V

Terminal Formu

FLAT

Kurşunsuz Kodu

no

Max Dual Supply Voltage

40V

Number Of Elements

1

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ