Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Surface Mount
- Avalanche Energy Rating Eas
- 110 mJ
- Terminal Pozisyonu
- BOTTOM
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2008
- Kılıf / Paket
- 3-WDSON
- Drainsource On Resistancemax
- 0.0104Ohm
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 50A
- Seri
- OptiMOS™
- JESD-609 Kodu
- e4
- Ds Breakdown Voltagemin
- 80V
- Fet Type
- N-Channel
- Pin Sayısı
- 3
- Vgs Max
- ±20V
- Fabrika Tedarik Süresi
- 26 Weeks
- Pulsed Drain Currentmax Idm
- 200A
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Power Dissipation Max
- 2.8W Ta 42W Tc
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Rds On Max Id Vgs
- 10.4m Ω @ 10A, 10V
- Current Continuous Drain Id25
- 13A Ta 50A Tc
- Halogen Free
- Halogen Free
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 4ns
- Vgsth Max Id
- 3.5V @ 40μA
- Terminal Formu
- NO LEAD
- Number Of Elements
- 1
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Montaj Tipi
- Surface Mount
- Drain To Source Voltage Vdss
- 80V
- ECCN Kodu
- EAR99
- Input Capacitance Ciss Max Vds
- 2100pF @ 40V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Gate Charge Qg Max Vgs
- 31nC @ 10V
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