BSB028N06NN3GXUMA1

Specifications

Halogen Free

Halogen Free

Qualification Status

Not Qualified

Power Dissipation Max

2.2W Ta 78W Tc

Nem Hassasiyeti (MSL)

3 (168 Hours)

Drain Currentmax Abs Id

22A

Pulsed Drain Currentmax Idm

360A

Pin Sayısı

7

Vgs Max

±20V

Case Connection

DRAIN

JESD-609 Kodu

e4

Kılıf / Paket

3-WDSON

Yüzey Montaj

YES

Terminal Pozisyonu

BOTTOM

Avalanche Energy Rating Eas

590 mJ

Drive Voltage Max Rds On Min Rds On

10V

Threshold Voltage

3V

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

38 ns

Gate Charge Qg Max Vgs

143nC @ 10V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

12000pF @ 30V

Montaj Tipi

Surface Mount

Terminal Sayısı

3

Gate To Source Voltage Vgs

20V

Power Dissipation

78W

Parça Durumu

Active

Vgsth Max Id

4V @ 102μA

Jesd30 Code

R-MBCC-N3

Rise Time

9ns

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

2.8m Ω @ 30A, 10V

Current Continuous Drain Id25

22A Ta 90A Tc

Fet Type

N-Channel

Fabrika Tedarik Süresi

26 Weeks

Continuous Drain Current Id

90A

Seri

OptiMOS™

Drainsource On Resistancemax

0.0028Ohm

Transistor Application

SWITCHING