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BDP949H6327XTSA1

Infineon Technologies

BDP949H6327XTSA1

Single BJT Transistors

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

Yüzey Montaj
YES
Voltage Collector Emitter Breakdown Max
60V
Terminal Pozisyonu
DUAL
Temel Parça No
BDP949
Case Connection
COLLECTOR
ECCN Kodu
EAR99
Reference Standard
AEC-Q101
Jesd30 Code
R-PDSO-G4
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Formu
GULL WING
Transistor Element Material
SILICON
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Current Collector Cutoff Max
100nA ICBO
Terminal Sayısı
4
Kılıf / Paket
TO-261-4, TO-261AA
Çalışma Sıcaklığı
150°C TJ
Configuration
SINGLE
Frequency Transition
100MHz
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Number Of Elements
1
Transistor Application
AMPLIFIER
Yayın Yılı
2011
Fabrika Tedarik Süresi
26 Weeks
Dc Current Gain Hfe Min Ic Vce
100 @ 500mA 1V
Vce Saturation Max Ib Ic
500mV @ 200mA, 2A
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)
Currentcollector Ic Max
3A
Transistor Type
NPN
Parça Durumu
Discontinued
Power Max
5W

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