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BCR573E6433HTMA1

Infineon Technologies

BCR573E6433HTMA1

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Max Power Dissipation
330mW
Kurşunsuz Kodu
yes
Montaj
Surface Mount
Parça Durumu
Not For New Designs
Resistor Base R1
1 k Ω
Nem Hassasiyeti (MSL)
1 (Unlimited)
Min. Çalışma Sıcaklığı
-65°C
Resistor Emitter Base R2
10 k Ω
Max Collector Current
500mA
Ambalaj
Tape & Reel (TR)
Fabrika Tedarik Süresi
26 Weeks
Terminal Sayısı
3
Voltage Rated Dc
-50V
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Montaj Tipi
Surface Mount
Terminal Formu
GULL WING
Pin Sayısı
3
Additional Feature
BUILT-IN BIAS RESISTOR RATIO 0.1
Transistor Type
PNP - Pre-Biased
Yayın Yılı
2007
Element Configuration
Single
Collector Emitter Voltage Vceo
300mV
Kurşunsuz
Lead Free
Number Of Elements
1
Temel Parça No
BCR573
Collectoremitter Breakdown Voltage
50V
Current Collector Cutoff Max
100nA ICBO
Vce Saturation Max Ib Ic
300mV @ 2.5mA, 50mA
RoHS Durumu
ROHS3 Compliant
Transistor Application
SWITCHING
Maks. Çalışma Sıcaklığı
150°C
Transition Frequency
150MHz
Akım Değeri
-500mA
Terminal Pozisyonu
DUAL
Dc Current Gain Hfe Min Ic Vce
70 @ 50mA 5V
Polaritychannel Type
PNP
Frequency Transition
150MHz

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