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AMI Semiconductor

DTA115EET1G

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Power Dissipation
200mW
Kılıf / Paket
SC-75, SOT-416
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)
Terminal Formu
GULL WING
Max Collector Current
100mA
Pin Sayısı
3
Terminal Sayısı
3
Radyasyon Dayanımı
No
Parça Durumu
Active
Kurşunsuz
Lead Free
JESD-609 Kodu
e3
Power Max
200mW
Halogen Free
Halogen Free
Vce Saturation Max Ib Ic
250mV @ 300µA, 10mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Tepe Reflow Süresi (maks. sn)
40
ECCN Kodu
EAR99
Collector Emitter Voltage Vceo
50V
Fabrika Tedarik Süresi
2 Weeks
Number Of Elements
1
Contact Plating
Tin
Continuous Collector Current
100mA
Transistor Application
SWITCHING
Dc Current Gain Hfe Min Ic Vce
80 @ 5mA, 10V
Resistor Emitter Base R2
100 kOhms
Element Configuration
Single
Terminal Pozisyonu
DUAL
Lead Free Status Rohs Status
Lead free / RoHS Compliant
Collectoremitter Breakdown Voltage
50V
Pin Sayısı
3
Voltage Collector Emitter Breakdown Max
50V
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Current Collector Cutoff Max
500nA
Temel Parça No
DTA115
Tepe Reflow Sıcaklığı (°C)
260
RoHS Durumu
ROHS3 Compliant
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Min. Çalışma Sıcaklığı
-55°C
Polarity
PNP

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