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BCR555E6327HTSA1

Infineon Technologies

BCR555E6327HTSA1

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Max Breakdown Voltage
50V
RoHS Durumu
ROHS3 Compliant
Transistor Application
SWITCHING
Maks. Çalışma Sıcaklığı
150°C
Vce Saturation Max Ib Ic
300mV @ 2.5mA, 50mA
Current Collector Cutoff Max
100nA ICBO
Collectoremitter Breakdown Voltage
50V
Polarity
PNP
Temel Parça No
BCR555
Hfemin
70
Halogen Free
Not Halogen Free
Frequency Transition
150MHz
Dc Current Gain Hfe Min Ic Vce
70 @ 50mA 5V
Transition Frequency
150MHz
Akım Değeri
-500mA
Terminal Pozisyonu
DUAL
Contact Plating
Tin
Voltage Rated Dc
-50V
HTS Kodu
8541.21.00.75
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Montaj Tipi
Surface Mount
Radyasyon Dayanımı
No
Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Resistor Base R1
2.2 k Ω
Parça Durumu
Not For New Designs
Terminal Sayısı
3
Fabrika Tedarik Süresi
26 Weeks
Ambalaj
Tape & Reel (TR)
Max Collector Current
500mA
Resistor Emitter Base R2
10 k Ω
Min. Çalışma Sıcaklığı
-65°C
Max Power Dissipation
330mW
Montaj
Surface Mount
JESD-609 Kodu
e3
Kurşunsuz
Lead Free
Collector Emitter Voltage Vceo
300mV
Number Of Elements
1
Transistor Type
PNP - Pre-Biased
Pin Sayısı
3

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