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BCR553E6327HTSA1

Infineon Technologies

BCR553E6327HTSA1

Pre-Biased BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kurşunsuz Kodu
yes
JESD-609 Kodu
e3
ECCN Kodu
EAR99
Nem Hassasiyeti (MSL)
1 (Unlimited)
Resistor Base R1
2.2 k Ω
Parça Durumu
Not For New Designs
Fabrika Tedarik Süresi
26 Weeks
Terminal Sayısı
3
Qualification Status
Not Qualified
Ambalaj
Tape & Reel (TR)
Resistor Emitter Base R2
2.2 k Ω
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Montaj Tipi
Surface Mount
Voltage Collector Emitter Breakdown Max
50V
Jesd30 Code
R-PDSO-G3
Currentcollector Ic Max
500mA
Other Names
BCR 553 E6327 BCR 553 E6327-ND BCR553E6327HTSA1TR BCR553E6327XT SP000010854
Power Max
330mW
Yüzey Montaj
YES
Terminal Formu
GULL WING
Transistor Type
PNP - Pre-Biased
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Tedarikçi Cihaz Paketi
SOT-23-3
Yayın Yılı
2011
Number Of Elements
1
Terminal Kaplaması
Tin (Sn)
Current Collector Cutoff Max
100nA ICBO
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Vce Saturation Max Ib Ic
300mV @ 2.5mA, 50mA
RoHS Durumu
ROHS3 Compliant
Transistor Element Material
SILICON
Lead Free Status Rohs Status
Lead free / RoHS Compliant
Transistor Application
SWITCHING
Transition Frequency
150MHz
Terminal Pozisyonu
DUAL
Dc Current Gain Hfe Min Ic Vce
40 @ 50mA 5V
Polaritychannel Type
PNP
Frequency Transition
150MHz
Configuration
SINGLE WITH BUILT-IN RESISTOR

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