
Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Surface Mount
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 330mW
- Fabrika Tedarik Süresi
- 26 Weeks
- Terminal Sayısı
- 6
- Min. Çalışma Sıcaklığı
- -65°C
- Resistor Emitter Base R2
- 10 k Ω
- Max Collector Current
- 500mA
- Ambalaj
- Tape & Reel (TR)
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Not For New Designs
- Resistor Base R1
- 1 k Ω
- Radyasyon Dayanımı
- No
- Montaj Tipi
- Surface Mount
- Contact Plating
- Tin
- Voltage Rated Dc
- 50V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Jesd30 Code
- R-PDSO-G6
- Terminal Formu
- GULL WING
- Yayın Yılı
- 2004
- Element Configuration
- Single
- Transistor Type
- NPN - Pre-Biased
- Pin Sayısı
- 3
- Additional Feature
- BUILT IN BIAS RESISTOR RATIO IS 0.1
- Number Of Elements
- 1
- Kurşunsuz
- Lead Free
- Collector Emitter Voltage Vceo
- 50V
- Temel Parça No
- BCR523
- Polarity
- NPN
- Collectoremitter Breakdown Voltage
- 50V
- Current Collector Cutoff Max
- 100nA ICBO
- Vce Saturation Max Ib Ic
- 300mV @ 2.5mA, 50mA
- Transistor Application
- SWITCHING
- Maks. Çalışma Sıcaklığı
- 150°C
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- 500mA
- Terminal Pozisyonu
- DUAL
- Transition Frequency
- 100MHz
- Dc Current Gain Hfe Min Ic Vce
- 70 @ 50mA 5V
Related Products
AMI Semiconductor
DTC124XM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115EET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115TM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA123JM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA124EM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA143ZM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA144WET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTC123TM3T5G
Pre-Biased BJT Transistors

