BCR521E6327HTSA1

Specifications

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Temel Parça No

BCR521

Current Collector Cutoff Max

100nA ICBO

Configuration

SINGLE WITH BUILT-IN RESISTOR

Frequency Transition

100MHz

Polaritychannel Type

NPN

Terminal Pozisyonu

DUAL

Transition Frequency

100MHz

Dc Current Gain Hfe Min Ic Vce

20 @ 50mA 5V

Montaj Tipi

Surface Mount

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Resistor Emitter Base R2

1 k Ω

Terminal Sayısı

3

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

26 Weeks

Resistor Base R1

1 k Ω

Parça Durumu

Not For New Designs

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Yayın Yılı

2002

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Type

NPN - Pre-Biased

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Currentcollector Ic Max

500mA

Jesd30 Code

R-PDSO-G3

Voltage Collector Emitter Breakdown Max

50V

Terminal Formu

GULL WING

Power Max

330mW

Yüzey Montaj

YES