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BCR503E6393HTSA1

Infineon Technologies

BCR503E6393HTSA1

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Transistor Type
NPN - Pre-Biased
Tedarikçi Cihaz Paketi
SOT-23-3
Collector Emitter Voltage Vceo
300mV
Frequency Transition
100MHz
Voltage Collector Emitter Breakdown Max
50V
Currentcollector Ic Max
500mA
Dc Current Gain Hfe Min Ic Vce
40 @ 50mA 5V
Power Max
330mW
Vce Saturation Max Ib Ic
300mV @ 2.5mA, 50mA
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Surface Mount
Max Power Dissipation
330mW
Montaj
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
50V
Current Collector Cutoff Max
100nA ICBO
Resistor Base R1
2.2 kOhms
Parça Durumu
Last Time Buy
Ambalaj
Tape & Reel (TR)
Resistor Emitter Base R2
2.2 kOhms
Max Collector Current
500mA

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