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BCR 199F E6327

Infineon Technologies

BCR 199F E6327

Pre-Biased BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Power Max
250mW
Polaritychannel Type
PNP
Frequency Transition
200MHz
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
120 @ 5mA 5V
Voltage Collector Emitter Breakdown Max
50V
Kılıf / Paket
SOT-723
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
ROHS3 Compliant
Number Of Elements
1
Transistor Element Material
SILICON
Ambalaj
Tape & Reel (TR)
Parça Durumu
Discontinued
Yüzey Montaj
YES
Yayın Yılı
2006
Resistor Base R1
47 k Ω
Vce Saturation Max Ib Ic
300mV @ 500μA, 10mA
Currentcollector Ic Max
70mA
Current Collector Cutoff Max
100nA ICBO
Power Dissipationmax Abs
0.25W
Transistor Type
PNP - Pre-Biased

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