
Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 250mW
- Dc Current Gain Hfe Min Ic Vce
- 70 @ 5mA 5V
- Currentcollector Ic Max
- 100mA
- Voltage Collector Emitter Breakdown Max
- 50V
- Frequency Transition
- 190MHz
- Yayın Yılı
- 2011
- Transistor Type
- 2 PNP - Pre-Biased (Dual)
- Ambalaj
- Tape & Reel (TR)
- Resistor Emitter Base R2
- 47k Ω
- Parça Durumu
- Last Time Buy
- Resistor Base R1
- 47k Ω
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 6-VSSOP, SC-88, SOT-363
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
Related Products
Aptina
EMD4DXV6T1G
BJT Transistors Arrays
Aptina
MUN5111DW1T1G
BJT Transistors Arrays
Aptina
MUN5114DW1T1G
BJT Transistors Arrays
Aptina
MUN5116DW1T1G
BJT Transistors Arrays
Aptina
MUN5211DW1T1G
BJT Transistors Arrays
Aptina
MUN5213DW1T1G
BJT Transistors Arrays
Aptina
MUN5214DW1T1G
BJT Transistors Arrays
Aptina
MUN5232DW1T1G
BJT Transistors Arrays

