Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 6
- RoHS Durumu
- ROHS3 Compliant
- Transistor Type
- 2 PNP - Pre-Biased (Dual)
- Resistor Base R1
- 10k Ω
- Jesd30 Code
- R-PDSO-G6
- Kılıf / Paket
- 6-VSSOP, SC-88, SOT-363
- Montaj
- Surface Mount
- Collector Emitter Voltage Vceo
- 300mV
- Resistor Emitter Base R2
- 10k Ω
- Power Max
- 250mW
- Additional Feature
- BUILT IN BIAS RESISTOR RATIO IS 1
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 250mW
- Max Collector Current
- 100mA
- Collectoremitter Breakdown Voltage
- 50V
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Parça Durumu
- Not For New Designs
- Fabrika Tedarik Süresi
- 26 Weeks
- Terminal Formu
- GULL WING
- Polaritychannel Type
- PNP
- Transition Frequency
- 200MHz
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Reference Standard
- AEC-Q101
- Frequency Transition
- 200MHz
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 5mA 5V
- Ambalaj
- Tape & Reel (TR)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2011
Related Products
Aptina
EMD4DXV6T1G
BJT Transistors Arrays
Aptina
MUN5111DW1T1G
BJT Transistors Arrays
Aptina
MUN5114DW1T1G
BJT Transistors Arrays
Aptina
MUN5116DW1T1G
BJT Transistors Arrays
Aptina
MUN5211DW1T1G
BJT Transistors Arrays
Aptina
MUN5213DW1T1G
BJT Transistors Arrays
Aptina
MUN5214DW1T1G
BJT Transistors Arrays
Aptina
MUN5232DW1T1G
BJT Transistors Arrays