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BCR183E6433HTMA1

Infineon Technologies

BCR183E6433HTMA1

Pre-Biased BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Jesd30 Code
R-PDSO-G3
Transistor Type
PNP - Pre-Biased
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Surface Mount
Terminal Sayısı
3
Resistor Base R1
10 k Ω
Qualification Status
Not Qualified
Power Max
200mW
Transistor Application
SWITCHING
Temel Parça No
BCR183
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Resistor Emitter Base R2
10 k Ω
Voltage Collector Emitter Breakdown Max
50V
Current Collector Cutoff Max
100nA ICBO
Terminal Formu
GULL WING
Kurşunsuz Kodu
yes
Fabrika Tedarik Süresi
26 Weeks
Parça Durumu
Not For New Designs
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Transistor Element Material
SILICON
Transition Frequency
200MHz
Polaritychannel Type
PNP
Vce Saturation Max Ib Ic
300mV @ 500μA, 10mA
Terminal Pozisyonu
DUAL
Yüzey Montaj
YES
Currentcollector Ic Max
100mA
ECCN Kodu
EAR99
Configuration
SINGLE WITH BUILT-IN RESISTOR
Yayın Yılı
2011
Nem Hassasiyeti (MSL)
1 (Unlimited)
Number Of Elements
1
Frequency Transition
200MHz
Dc Current Gain Hfe Min Ic Vce
30 @ 5mA 5V
Ambalaj
Tape & Reel (TR)

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