Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Resistor Emitter Base R2
- 4.7 k Ω
- Yüzey Montaj
- YES
- Yayın Yılı
- 2008
- Resistor Base R1
- 4.7 k Ω
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Currentcollector Ic Max
- 100mA
- Current Collector Cutoff Max
- 100nA ICBO
- Temel Parça No
- BCR162
- Power Dissipationmax Abs
- 0.25W
- Transistor Type
- PNP - Pre-Biased
- Power Max
- 200mW
- Polaritychannel Type
- PNP
- Montaj Tipi
- Surface Mount
- Frequency Transition
- 200MHz
- Voltage Collector Emitter Breakdown Max
- 50V
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 5mA 5V
- Kılıf / Paket
- SOT-723
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- RoHS Compliant
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Obsolete
Related Products
AMI Semiconductor
DTC124XM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115EET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115TM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA123JM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA124EM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA143ZM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA144WET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTC123TM3T5G
Pre-Biased BJT Transistors