
Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transition Frequency
- 100MHz
- Polarity
- NPN
- Terminal Formu
- GULL WING
- Fabrika Tedarik Süresi
- 26 Weeks
- Parça Durumu
- Not For New Designs
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Uzunluk
- 2mm
- Element Configuration
- Dual
- ECCN Kodu
- EAR99
- Collectoremitter Breakdown Voltage
- 50V
- Max Collector Current
- 100mA
- Yayın Yılı
- 2009
- JESD-609 Kodu
- e3
- Min. Çalışma Sıcaklığı
- -65°C
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Hfemin
- 70
- Dc Current Gain Hfe Min Ic Vce
- 70 @ 5mA 5V
- Frequency Transition
- 100MHz
- Ambalaj
- Tape & Reel (TR)
- Reference Standard
- AEC-Q101
- Number Of Elements
- 2
- Genişlik
- 1.25mm
- Yükseklik
- 800μm
- Halogen Free
- Halogen Free
- Resistor Base R1
- 47k Ω
- Maks. Çalışma Sıcaklığı
- 150°C
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 6
- Max Power Dissipation
- 250mW
- Terminal Kaplaması
- Tin (Sn)
- Transistor Application
- SWITCHING
- Temel Parça No
- BCR148S
- Additional Feature
- BUILT IN BIAS RESISTOR RATIO IS 1
- Pin Sayısı
- 6
- Collectoremitter Saturation Voltage
- 300mV
- Resistor Emitter Base R2
- 47k Ω
- Collector Emitter Voltage Vceo
- 300mV
Related Products
Aptina
EMD4DXV6T1G
BJT Transistors Arrays
Aptina
MUN5111DW1T1G
BJT Transistors Arrays
Aptina
MUN5114DW1T1G
BJT Transistors Arrays
Aptina
MUN5116DW1T1G
BJT Transistors Arrays
Aptina
MUN5211DW1T1G
BJT Transistors Arrays
Aptina
MUN5213DW1T1G
BJT Transistors Arrays
Aptina
MUN5214DW1T1G
BJT Transistors Arrays
Aptina
MUN5232DW1T1G
BJT Transistors Arrays

