Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2011
- Resistor Emitter Base R2
- 47 k Ω
- Transistor Type
- NPN - Pre-Biased
- Temel Parça No
- BCR135
- Currentcollector Ic Max
- 100mA
- Current Collector Cutoff Max
- 100nA ICBO
- Resistor Base R1
- 10 k Ω
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Voltage Collector Emitter Breakdown Max
- 50V
- Dc Current Gain Hfe Min Ic Vce
- 70 @ 5mA 5V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Power Max
- 200mW
- Frequency Transition
- 150MHz
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Obsolete
- Ambalaj
- Tape & Reel (TR)
Related Products
AMI Semiconductor
DTC124XM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115EET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115TM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA123JM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA124EM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA143ZM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA144WET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTC123TM3T5G
Pre-Biased BJT Transistors