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BCR 133 B6327

Infineon Technologies

BCR 133 B6327

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Transistor Application
SWITCHING
Transition Frequency
130MHz
Terminal Formu
GULL WING
Yayın Yılı
2007
Power Max
200mW
Polaritychannel Type
NPN
Montaj Tipi
Surface Mount
Jesd30 Code
R-PDSO-G3
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
RoHS Durumu
ROHS3 Compliant
Terminal Pozisyonu
DUAL
Ambalaj
Tape & Reel (TR)
Resistor Emitter Base R2
10 k Ω
Yüzey Montaj
YES
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Resistor Base R1
10 k Ω
Vce Saturation Max Ib Ic
300mV @ 500μA, 10mA
Operating Temperature Max
150°C
Currentcollector Ic Max
100mA
Current Collector Cutoff Max
100nA ICBO
Temel Parça No
BCR133
Configuration
SINGLE WITH BUILT-IN RESISTOR
Transistor Type
NPN - Pre-Biased
Frequency Transition
130MHz
Terminal Sayısı
3
Dc Current Gain Hfe Min Ic Vce
30 @ 5mA 5V
Voltage Collector Emitter Breakdown Max
50V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Element Material
SILICON
Number Of Elements
1
Parça Durumu
Discontinued

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