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BCR119SE6433HTMA1

Infineon Technologies

BCR119SE6433HTMA1

BJT Transistors Arrays

RoHS: Compliant

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2007
Number Of Elements
2
Ambalaj
Tape & Reel (TR)
Dc Current Gain Hfe Min Ic Vce
120 @ 5mA 5V
Frequency Transition
150MHz
Terminal Formu
GULL WING
Parça Durumu
Obsolete
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Transistor Element Material
SILICON
Polaritychannel Type
NPN
Transition Frequency
150MHz
Collectoremitter Breakdown Voltage
50V
Max Collector Current
100mA
Vce Saturation Max Ib Ic
300mV @ 500μA, 10mA
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Max
250mW
Max Power Dissipation
250mW
Temel Parça No
BCR119S
Additional Feature
BUILT-IN BIAS RESISTOR
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Application
SWITCHING
Montaj
Surface Mount
Kılıf / Paket
6-VSSOP, SC-88, SOT-363
Collector Emitter Voltage Vceo
300mV
Jesd30 Code
R-PDSO-G6
RoHS Durumu
RoHS Compliant
Transistor Type
2 NPN - Pre-Biased (Dual)
Montaj Tipi
Surface Mount
Terminal Sayısı
6
Resistor Base R1
4.7k Ω

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