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BCR116E6433HTMA1

Infineon Technologies

BCR116E6433HTMA1

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Fabrika Tedarik Süresi
26 Weeks
Kurşunsuz Kodu
yes
Voltage Collector Emitter Breakdown Max
50V
Terminal Formu
GULL WING
Current Collector Cutoff Max
100nA ICBO
Parça Durumu
Not For New Designs
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Transistor Element Material
SILICON
Polaritychannel Type
NPN
Transition Frequency
160MHz
Yüzey Montaj
YES
Vce Saturation Max Ib Ic
300mV @ 500μA, 10mA
Terminal Pozisyonu
DUAL
Configuration
SINGLE WITH BUILT-IN RESISTOR
ECCN Kodu
EAR99
Currentcollector Ic Max
100mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2011
Number Of Elements
1
Frequency Transition
150MHz
Dc Current Gain Hfe Min Ic Vce
70 @ 5mA 5V
Ambalaj
Tape & Reel (TR)
Jesd30 Code
R-PDSO-G3
Transistor Type
NPN - Pre-Biased
RoHS Durumu
ROHS3 Compliant
Terminal Sayısı
3
Montaj Tipi
Surface Mount
Qualification Status
Not Qualified
Resistor Base R1
4.7 k Ω
Power Max
200mW
Temel Parça No
BCR116
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 10
Transistor Application
SWITCHING
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Resistor Emitter Base R2
47 k Ω

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