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BCR112WH6327XTSA1

Infineon Technologies

BCR112WH6327XTSA1

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Parça Durumu
Not For New Designs
Terminal Formu
GULL WING
Current Collector Cutoff Max
100nA ICBO
Fabrika Tedarik Süresi
4 Weeks
Polarity
NPN
Transition Frequency
140MHz
Max Collector Current
100mA
Collectoremitter Breakdown Voltage
50V
ECCN Kodu
EAR99
Vce Saturation Max Ib Ic
300mV @ 500μA, 10mA
Terminal Pozisyonu
DUAL
Element Configuration
Single
Hfemin
20
JESD-609 Kodu
e3
Yayın Yılı
2007
Min. Çalışma Sıcaklığı
-65°C
Nem Hassasiyeti (MSL)
1 (Unlimited)
Number Of Elements
1
Frequency Transition
140MHz
Dc Current Gain Hfe Min Ic Vce
20 @ 5mA 5V
Ambalaj
Tape & Reel (TR)
Terminal Sayısı
3
Montaj Tipi
Surface Mount
RoHS Durumu
ROHS3 Compliant
Transistor Type
NPN - Pre-Biased
Radyasyon Dayanımı
No
Resistor Base R1
4.7 k Ω
Maks. Çalışma Sıcaklığı
150°C
Halogen Free
Halogen Free
Pin Sayısı
3
Transistor Application
SWITCHING
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Temel Parça No
BCR112
Max Power Dissipation
250mW
Terminal Kaplaması
Tin (Sn)
Kılıf / Paket
SC-70, SOT-323
Kurşunsuz
Lead Free
Montaj
Surface Mount
Collector Emitter Voltage Vceo
300mV
Resistor Emitter Base R2
4.7 k Ω

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