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BCR 101L3 E6327

Infineon Technologies

BCR 101L3 E6327

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Voltage Collector Emitter Breakdown Max
50V
Dc Current Gain Hfe Min Ic Vce
70 @ 5mA 5V
Kılıf / Paket
SC-101, SOT-883
Power Max
250mW
Polaritychannel Type
NPN
Montaj Tipi
Surface Mount
Frequency Transition
100MHz
Parça Durumu
Discontinued
Number Of Elements
1
Transistor Element Material
SILICON
RoHS Durumu
ROHS3 Compliant
Ambalaj
Tape & Reel (TR)
REACH Uyumluluk Kodu
unknown
Yayın Yılı
2003
Resistor Emitter Base R2
100 k Ω
Yüzey Montaj
YES
Transistor Type
NPN - Pre-Biased
Power Dissipationmax Abs
0.25W
Currentcollector Ic Max
50mA
Current Collector Cutoff Max
100nA ICBO
Resistor Base R1
100 k Ω
Vce Saturation Max Ib Ic
300mV @ 250μA, 5mA

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