Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 16.51mm
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 14 ns
- Turn Off Delay Time
- 25 ns
- Uzunluk
- 10.67mm
- Terminal Sayısı
- 3
- Seri
- HEXFET®
- Reach Svhc
- No SVHC
- Drain To Source Breakdown Voltage
- 55V
- Threshold Voltage
- 1V
- Rise Time
- 160ns
- Fabrika Tedarik Süresi
- 16 Weeks
- Gate To Source Voltage Vgs
- 16V
- Pulsed Drain Currentmax Idm
- 204A
- ECCN Kodu
- EAR99
- Fall Time Typ
- 42 ns
- Additional Feature
- ULTRA-LOW RESISTANCE
- Case Connection
- DRAIN
- Gate Charge Qg Max Vgs
- 36nC @ 5V
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Number Of Elements
- 1
- Continuous Drain Current Id
- 51A
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 80W Tc
- Rds On Max Id Vgs
- 13.5m Ω @ 31A, 10V
- Transistor Element Material
- SILICON
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2011
- Kılıf / Paket
- TO-220-3
- Parça Durumu
- Active
- Genişlik
- 4.83mm
- Input Capacitance Ciss Max Vds
- 1620pF @ 25V
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 51A Tc
- Montaj
- Through Hole
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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