AUIRLU3110Z

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Continuous Drain Current Id

63A

Power Dissipation Max

140W Tc

Transistor Application

SWITCHING

Rds On Max Id Vgs

14m Ω @ 38A, 10V

RoHS Durumu

RoHS Compliant

Element Configuration

Single

Genişlik

6.22mm

Drain Currentmax Abs Id

42A

Ambalaj

Tube

Montaj

Through Hole

Radyasyon Dayanımı

No

Contact Plating

Tin

Yükseklik

2.39mm

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

33 ns

Uzunluk

6.73mm

Terminal Sayısı

3

Seri

HEXFET®

Drain To Source Breakdown Voltage

100V

Threshold Voltage

1V

Rise Time

110ns

Fabrika Tedarik Süresi

11 Weeks

Tepe Reflow Süresi (maks. sn)

30

Montaj Tipi

Through Hole

Number Of Elements

1

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Yayın Yılı

2009

Parça Durumu

Obsolete

Pin Sayısı

3

Input Capacitance Ciss Max Vds

3980pF @ 25V

Current Continuous Drain Id25

42A Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

1 V

Power Dissipation

140W

Vgsth Max Id

2.5V @ 100μA

Fet Type

N-Channel

Turn On Delay Time

24 ns