AUIRLR120NTRL

Specifications

Ds Breakdown Voltagemin

100V

Fet Type

N-Channel

Drain To Source Voltage Vdss

100V

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

2

Seri

HEXFET®

Terminal Pozisyonu

SINGLE

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Sıcaklığı (°C)

260

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

30

Case Connection

DRAIN

Gate Charge Qg Max Vgs

20nC @ 5V

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

35A

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Transistor Application

SWITCHING

Power Dissipation Max

48W Tc

Montaj Tipi

Surface Mount

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2015

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Parça Durumu

Active

Terminal Formu

GULL WING

Rds On Max Id Vgs

185m Ω @ 6A, 10V

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

10A Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±16V

Yüzey Montaj

YES

Input Capacitance Ciss Max Vds

440pF @ 25V

Drain Currentmax Abs Id

10A

Drainsource On Resistancemax

0.225Ohm

Jesd30 Code

R-PSSO-G2