AUIRL7766M2TR

Specifications

Fabrika Tedarik Süresi

16 Weeks

Threshold Voltage

2.5V

Rise Time

24ns

Drain To Source Breakdown Voltage

100V

Gate Charge Qg Max Vgs

66nC @ 4.5V

Case Connection

DRAIN

Additional Feature

HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Gate To Source Voltage Vgs

16V

Pulsed Drain Currentmax Idm

204A

Fall Time Typ

49 ns

Turn Off Delay Time

120 ns

Turn On Delay Time

16 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Reach Svhc

No SVHC

Terminal Pozisyonu

BOTTOM

Seri

HEXFET®

Terminal Sayısı

5

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±16V

Current Continuous Drain Id25

10A Ta

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.01Ohm

Pin Sayısı

9

Drain Currentmax Abs Id

51A

Input Capacitance Ciss Max Vds

5305pF @ 25V

Vgsth Max Id

2.5V @ 150μA

Jesd30 Code

R-XBCC-N5

Power Dissipation

62.5W

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Radyasyon Dayanımı

No

Avalanche Energy Rating Eas

237 mJ

Power Dissipation Max

2.5W Ta 62.5W Tc

Transistor Application

SWITCHING

Continuous Drain Current Id

10A

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn)