AUIRL7736M2TR

Specifications

Gate Charge Qg Max Vgs

78nC @ 4.5V

Case Connection

DRAIN

Fall Time Typ

76 ns

Pulsed Drain Currentmax Idm

450A

Gate To Source Voltage Vgs

16V

Additional Feature

HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Threshold Voltage

1.8V

Rise Time

210ns

Fabrika Tedarik Süresi

16 Weeks

Drain To Source Breakdown Voltage

40V

Reach Svhc

No SVHC

Terminal Sayısı

5

Seri

HEXFET®

Terminal Pozisyonu

BOTTOM

Turn Off Delay Time

56 ns

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

48 ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

63W

Vgsth Max Id

2.5V @ 150μA

Jesd30 Code

R-XBCC-N5

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

179A Tc

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Vgs Max

±16V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

9

Drain Currentmax Abs Id

22A

Input Capacitance Ciss Max Vds

5055pF @ 25V

Drainsource On Resistancemax

0.003Ohm

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2011

Kılıf / Paket

DirectFET™ Isometric M4

Parça Durumu

Active

Transistor Element Material

SILICON

Rds On Max Id Vgs

3m Ω @ 67A, 10V

Continuous Drain Current Id

179A