AUIRL7732S2TR

Specifications

Reach Svhc

No SVHC

Terminal Pozisyonu

BOTTOM

Seri

HEXFET®

Terminal Sayısı

3

Turn Off Delay Time

22 ns

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

21 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Case Connection

DRAIN

Gate Charge Qg Max Vgs

33nC @ 4.5V

Additional Feature

HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Gate To Source Voltage Vgs

16V

Pulsed Drain Currentmax Idm

230A

ECCN Kodu

EAR99

Fall Time Typ

37 ns

Fabrika Tedarik Süresi

16 Weeks

Threshold Voltage

1.8V

Rise Time

123ns

Drain To Source Breakdown Voltage

40V

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2011

Kılıf / Paket

DirectFET™ Isometric SC

Rds On Max Id Vgs

6.6m Ω @ 35A, 10V

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Power Dissipation Max

2.2W Ta 41W Tc

Continuous Drain Current Id

14A

Number Of Elements

1

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Jesd30 Code

R-XBCC-N3

Vgsth Max Id

2.5V @ 50μA

Power Dissipation

2.2W

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Radyasyon Dayanımı

No

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±16V

Montaj

Surface Mount