AUIRL3705ZSTRL

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Drain To Source Breakdown Voltage

55V

Rise Time

240ns

Fall Time Typ

83 ns

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

16V

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Tepe Reflow Süresi (maks. sn)

30

Gate Charge Qg Max Vgs

60nC @ 5V

Case Connection

DRAIN

Fet Type

N-Channel

Turn On Delay Time

17 ns

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

26 ns

Terminal Sayısı

2

Seri

HEXFET®

Pin Sayısı

3

Input Capacitance Ciss Max Vds

2880pF @ 25V

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.008Ohm

Current Continuous Drain Id25

75A Tc

Ambalaj

Cut Tape (CT)

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Radyasyon Dayanımı

No

Contact Plating

Tin

Power Dissipation

130W

Vgsth Max Id

3V @ 250μA

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Number Of Elements

1

Continuous Drain Current Id

75A

Power Dissipation Max

130W Tc

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Rds On Max Id Vgs

8m Ω @ 52A, 10V

JESD-609 Kodu

e3

RoHS Durumu

ROHS3 Compliant