AUIRFZ44ZSTRL

Specifications

Turn Off Delay Time

33 ns

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

14 ns

Seri

HEXFET®

Terminal Sayısı

2

Rise Time

68ns

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Sıcaklığı (°C)

260

Drain To Source Breakdown Voltage

55V

Tepe Reflow Süresi (maks. sn)

30

Case Connection

DRAIN

Gate Charge Qg Max Vgs

43nC @ 10V

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

200A

ECCN Kodu

EAR99

Fall Time Typ

41 ns

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Continuous Drain Current Id

51A

Transistor Application

SWITCHING

Power Dissipation Max

80W Tc

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2004

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Parça Durumu

Active

Rds On Max Id Vgs

13.9m Ω @ 31A, 10V

Terminal Formu

GULL WING

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

51A Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Input Capacitance Ciss Max Vds

1420pF @ 25V