AUIRFZ44Z

Specifications

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Continuous Drain Current Id

51A

Transistor Application

SWITCHING

Power Dissipation Max

80W Tc

Rds On Max Id Vgs

13.9m Ω @ 31A, 10V

Transistor Element Material

SILICON

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2000

Kılıf / Paket

TO-220-3

Parça Durumu

Active

Genişlik

4.83mm

Input Capacitance Ciss Max Vds

1420pF @ 25V

Pin Sayısı

3

Current Continuous Drain Id25

51A Tc

Ambalaj

Tube

Montaj

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

80W

Vgsth Max Id

4V @ 250μA

Yükseklik

16.51mm

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

14 ns

Turn Off Delay Time

33 ns

Uzunluk

10.67mm

Terminal Sayısı

3

Seri

HEXFET®

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

55V

Threshold Voltage

2V

Rise Time

68ns

Fabrika Tedarik Süresi

16 Weeks

Gate To Source Voltage Vgs

20V